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About This Item
经验公式（希尔记法）:
Ga2O3
CAS号:
分子量:
187.44
EC號碼:
MDL號碼:
分類程式碼代碼:
12352300
PubChem物質ID:
NACRES:
NA.23
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品質等級
化驗
≥99.99% trace metals basis
形狀
(crystalline powder)
反應適用性
reagent type: catalyst
core: gallium
密度
5.88 g/mL at 25 °C
SMILES 字串
O=[Ga]O[Ga]=O
InChI
1S/2Ga.3O
InChI 密鑰
QZQVBEXLDFYHSR-UHFFFAOYSA-N
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一般說明
氧化镓（III）（Ga2O3）是一种宽带隙半导体，属于透明半导体氧化物（TSO）家族。它可以形成不同的多晶型，如α-、β-、γ-、δ- 和 ε-。多晶和纳米晶 Ga2O3 可以使用多种方法制备，如化学气相沉积、热蒸发和升华、分子束外延、熔体生长等。它被广泛用作各种应用的功能材料，包括光电子、化学传感器、催化、半导体器件、场效应晶体管等。
應用
Ga2O3 被广泛用作制造电致发光器件的主体材料。例如，可以使用掺杂铕的 Ga2O3 薄膜作为发光层来制造光学透明的电致发光器件。
由于其独特的光学和电学特性，如中等电导率和高激光损伤阈值，Ga2O3 可用于激光驱动的电子加速器、低损耗等离子体和硅基电介质激光加速器。
它也可以用作丙烷脱氢制丙烯的有效催化剂。
由于其独特的光学和电学特性，如中等电导率和高激光损伤阈值，Ga2O3 可用于激光驱动的电子加速器、低损耗等离子体和硅基电介质激光加速器。
它也可以用作丙烷脱氢制丙烯的有效催化剂。
用于制备 Sr2CuGaO3S 的起始材料，这是一种罕见的方形金字塔镓的例子。
儲存類別代碼
11 - Combustible Solids
水污染物質分類（WGK）
WGK 2
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
Eyeshields, Gloves, type N95 (US)
Bipin Pandey et al.
Langmuir : the ACS journal of surfaces and colloids, 28(38), 13705-13711 (2012-09-01)
This paper reports the formation of self-organized nanoporous gallium oxide by anodization of solid gallium metal. Because of its low melting point (ca. 30 °C), metallic gallium can be shaped into flexible structures, permitting the fabrication of nanoporous anodic oxide
Vladimir N Sigaev et al.
Nanoscale, 5(1), 299-306 (2012-11-21)
Nanoparticles in amorphous oxides are a powerful tool for embedding a wide range of functions in optical glasses, which are still the best solutions in several applications in the ever growing field of photonics. However, the control of the nanoparticle
Sr(2)CuGaO(3)S, a Rare Example of Square Pyramidal Gallium.
W. J. Zhu et al.
Inorganic chemistry, 36(17), 3576-3577 (1997-08-13)
Yi-Jen Wu et al.
ACS nano, 4(3), 1393-1398 (2010-02-13)
Light-scattering properties of individual gold-in-Ga(2)O(3) peapod nanowires and gold-in-Ga(2)O(3) core/shell nanowires were investigated by optical dark-field microscopy. The observed scattering peaks are suggested to result from plasmonic resonance of the gold nanopeas and nanorods in the Ga(2)O(3) nanowires. As the
Rujia Zou et al.
Small (Weinheim an der Bergstrasse, Germany), 7(23), 3377-3384 (2011-10-06)
Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based
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