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蒸汽壓力
<0.01 mmHg ( 25 °C)
化驗
99.998% trace metals basis
形狀
powder
反應適用性
reagent type: catalyst
core: indium
密度
7.18 g/mL at 25 °C (lit.)
應用
battery manufacturing
SMILES 字串
O=[In]O[In]=O
InChI
1S/2In.3O
InChI 密鑰
SHTGRZNPWBITMM-UHFFFAOYSA-N
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應用
- 合成与表征：开发锡和氧化铟薄膜表面金纳米簇，从而为高级应用合成新材料（Korotcenkov et al., 2014）。
- 光催化：使用氮/硫共掺杂碳包覆氧化铟纳米颗粒作为优秀的光催化剂，为环境和能源应用提供见解（Sun et al., 2019）。
儲存類別代碼
11 - Combustible Solids
水污染物質分類（WGK）
WGK 3
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
其他客户在看
Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Ariel Amir et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(6), 1850-1855 (2012-02-09)
Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
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Self-Assembled Nanodielectrics (SANDs) for Unconventional Electronics
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