920924
Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer
diam. 200 mm (8 in.)
Synonym(s):
Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene
About This Item
Recommended Products
description
Bandgap: 5.97 eV
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Monolayer h-BN
Orientation: <1-0-0>
Raman Peak: 1370 /cm-1
Substrate Type/Doping: P/B
hBN Coverage: 100% with sporadic adlayers
Quality Level
resistivity
5-30 Ω-cm
diam.
200 mm (8 in.)
thickness
300 nm , Oxide
725 ± 25 μm , Wafer
grain size
>4 μm
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
Looking for similar products? Visit Product Comparison Guide
Application
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- nsulating/transparent coatings
Storage and Stability
Storage Class
13 - Non Combustible Solids
wgk_germany
WGK 3
Choose from one of the most recent versions:
Certificates of Analysis (COA)
Sorry, we don't have COAs for this product available online at this time.
If you need assistance, please contact Customer Support.
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.
Contact Technical Service