모든 사진(3)
About This Item
Linear Formula:
NH4F
CAS Number:
Molecular Weight:
37.04
EC Number:
MDL number:
UNSPSC 코드:
12352300
eCl@ss:
38050106
PubChem Substance ID:
NACRES:
NA.21
추천 제품
Grade
ACS reagent
Quality Level
분석
≥98.0%
형태
crystals, granules or chunks
불순물
≤0.005% insolubles
무기 잔류물
≤0.01%
pH
~6 (20 °C)
음이온 미량물
chloride (Cl-): ≤0.001%
sulfate (SO42-): ≤0.005%
양이온 미량물
Fe: ≤5 ppm
heavy metals (as Pb): ≤5 ppm
SMILES string
N.F
InChI
1S/FH.H3N/h1H;1H3
InChI key
LDDQLRUQCUTJBB-UHFFFAOYSA-N
유사한 제품을 찾으십니까? 방문 제품 비교 안내
애플리케이션
Employed in a new hydrothermal synthesis of complex flourides NaHoF4 and NaEuF4 these interesting compounds have the fluorite structure and are important for solid-state lasers as well as for photoluminescence and magnetic characteristics.
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral
Storage Class Code
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
WGK
WGK 1
Flash Point (°F)
does not flash
Flash Point (°C)
does not flash
시험 성적서(COA)
제품의 로트/배치 번호를 입력하여 시험 성적서(COA)을 검색하십시오. 로트 및 배치 번호는 제품 라벨에 있는 ‘로트’ 또는 ‘배치’라는 용어 뒤에서 찾을 수 있습니다.
Self-organized TiO2 nanotubes prepared in ammonium fluoride containing acetic acid electrolytes.
Tsuchiya H, et al.
Electrochemical Communications, 7(6), 576-580 (2005)
Phase transition in ammonium fluoride.
Stevenson R.
J. Chem. Phys. , 34(1), 346-347 (1961)
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Gerischer H and Lubke M.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Lewerenz HJ, et al.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Jae Hoon Bong et al.
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
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