모든 사진(3)
About This Item
Linear Formula:
AlN
CAS Number:
Molecular Weight:
40.99
EC Number:
MDL number:
UNSPSC 코드:
12352302
PubChem Substance ID:
NACRES:
NA.23
추천 제품
형태
nanopowder
입자 크기
<100 nm
mp
>2200 °C (lit.)
density
3.26 g/mL at 25 °C (lit.)
SMILES string
N#[Al]
InChI
1S/Al.N
InChI key
PIGFYZPCRLYGLF-UHFFFAOYSA-N
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일반 설명
Aluminum nitride (AlN) is a wide bandgap semiconductor with exceptional thermal conductivity, high electrical insulation, and piezoelectric properties. It is widely used in electronics, such as in high-power and high-frequency devices, as well as in optoelectronics for UV light emitters. Additionally, AlN is utilized in biomedical devices due to its biocompatibility.
애플리케이션
- This review explores the significant properties of aluminum nitride in the context of semiconductor materials, discussing its large bandgap and wide transparency range, which are advantageous for ultraviolet to mid-infrared applications (Li et al., 2021).
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
표적 기관
Lungs
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
dust mask type N95 (US), Eyeshields, Gloves
Electrical and thermophysical properties of epoxy/aluminum nitride nanocomposites: Effects of nanoparticle surface modification
Peng W, et al.
Composites Part A: Applied Science and Manufacturing, 41(9), 1201-1209 (2010)
Shuangxi Nie et al.
Nanomaterials (Basel, Switzerland), 9(8) (2019-08-07)
Nanocomposites consisting of cellulose nanofibrils (CNFs) and nano-aluminum nitride (AlN) were prepared using a simple vacuum-assisted filtration process. Bleached sugarcane bagasse pulp was treated with potassium hydroxide and sodium chlorite, and was subsequently ultra-finely ground and homogenized to obtain CNFs.
Nanocrystalline aluminum nitride: II, sintering and properties.
Panchula ML and Ying JY
American Chemical Science Journal, 86(7), 1121-1127 (2003)
Morphologically selective synthesis of nanocrystalline aluminum nitride.
Haber JA, et al.
Chemistry of Materials, 10(12), 4062-4071 (1998)
Norio Iizuka et al.
Optics express, 17(25), 23247-23253 (2010-01-07)
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size
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