추천 제품
분석
≥98%
형태
powder
입자 크기
10 μm
mp
>2200 °C (lit.)
density
3.26 g/mL at 25 °C (lit.)
SMILES string
N#[Al]
InChI
1S/Al.N
InChI key
PIGFYZPCRLYGLF-UHFFFAOYSA-N
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일반 설명
Aluminum Nitride(AlN) is a non-oxide semiconductor material with a hexagonal Wurtzite crystal structure. It has a wide direct bandgap of 6.12 eV. AIN is a suitable additive in making thermal grease and electric cable insulation owing to its very high thermal conductivity (300 W/(m. K)) and electrical resistivity. It is also used in microelectronics, electroluminescent devices, and sensors because of its non-toxicity, superior thermal, electrical, mechanical, and chemical properties.
애플리케이션
Aluminum Nitride can be used as a:
- ceramic material in the preparation of nano capsulated phase change material for building thermal management systems.
- matrix in the preparation of metacomposites along with graphene platelets to improve their thermal conductive properties.
- foaming agent in the preparation of foam glass using glass waste.
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
표적 기관
Lungs
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
dust mask type N95 (US), Eyeshields, Gloves
Novel hybrid composite phase change materials with high thermal performance based on aluminium nitride and nanocapsules
Lu Wang, et al.
Energy, 238, 121775-121775 (2022)
Band structure and fundamental optical transitions in wurtzite AlN
Li, Jing, et al.
Applied Physics Letters, 83(25), 5163-5165 (2003)
Mohammad T Baei et al.
Journal of molecular modeling, 18(9), 4477-4489 (2012-05-31)
Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Geometry optimizations were carried out at the B3LYP/6-31G* level
Norio Iizuka et al.
Optics express, 17(25), 23247-23253 (2010-01-07)
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size
Javad Beheshtian et al.
Journal of molecular modeling, 18(10), 4745-4750 (2012-06-09)
Single-walled aluminum nitride nanotubes (AlNNTs) are introduced as an electronic sensor for detection of sulfur dioxide (SO₂) molecules based on density functional theory calculations. The proposed sensor benefits from several advantages including high sensitivity: HOMO-LUMO energy gap of the AlNNT
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