추천 제품
분석
99.9% trace metals basis
양식
powder
mp
800 °C (lit.)
SMILES string
N#[Ga]
InChI
1S/Ga.N
InChI key
JMASRVWKEDWRBT-UHFFFAOYSA-N
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애플리케이션
Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications.
신호어
Warning
유해 및 위험 성명서
Hazard Classifications
Skin Sens. 1
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
Eyeshields, Faceshields, Gloves, type N95 (US)
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating
문서
Spectral conversion for solar cells is an emerging concept in the field of photovoltaics, and it has the potential to increase significantly the efficiency of solar cells. Lanthanide ions are ideal candidates for spectral conversion, due to their high luminescence efficiencies and rich energy level structure that allows for great flexibility in the upconversion and downconversion of photons in a wide spectral region (NIR-VIS-UV).
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