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Merck
모든 사진(1)

주요 문서

456365

Sigma-Aldrich

3-Dodecylthiophene

97%

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About This Item

실험식(Hill 표기법):
C16H28S
CAS Number:
Molecular Weight:
252.46
MDL number:
UNSPSC 코드:
12352103
PubChem Substance ID:
NACRES:
NA.23

Quality Level

분석

97%

refractive index

n20/D 1.488 (lit.)

bp

290 °C (lit.)

density

0.902 g/mL at 25 °C (lit.)

저장 온도

2-8°C

SMILES string

CCCCCCCCCCCCc1ccsc1

InChI

1S/C16H28S/c1-2-3-4-5-6-7-8-9-10-11-12-16-13-14-17-15-16/h13-15H,2-12H2,1H3

InChI key

RFKWIEFTBMACPZ-UHFFFAOYSA-N

일반 설명

3-Dodecylthiophene (3-DT) is a conjugating monomer that can be used as an active layer on semiconductors. It has good electronic properties and can be used in the development of p-type semiconducting polymers. It is mainly used in the formation of poly(3-dodecylthiophene) (P3DT) through electrochemical polymerization. P3DT can further be utilized for a variety of organic electronic based applications.

애플리케이션

Conducting polymer precursor.

Storage Class Code

10 - Combustible liquids

WGK

WGK 3

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

개인 보호 장비

Eyeshields, Gloves


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문서 라이브러리 방문

Subthreshold characteristics of field effect transistors based on poly (3-dodecylthiophene) and an organic insulator
Scheinert S, et al.
Journal of Applied Physics, 92(1), 330-337 (2002)
Controlled charge transport by polymer blend dielectrics in top-gate organic field-effect transistors for low-voltage-operating complementary circuits
Baeg K, et al.
ACS Applied Materials & Interfaces, 4(11), 6176-6184 (2012)
Nuclear magnetic resonance studies on electrochemically prepared poly (3-dodecylthiophene)
Sato M and Morii H
Macromolecules, 24(5), 1196-1200 (1991)
Hiro Minamimoto et al.
Nanoscale, 13(3), 1784-1790 (2021-01-13)
Plasmon-induced chemical reactions triggered by near-infrared light illumination might enable efficient photo energy conversion. Here, electrochemical oxidative polymerization of a conductive polymer was conducted on plasmonic photoconversion electrodes. The absolute electrochemical potential of the generated holes was estimated from the
Journal of the American Chemical Society, 117, 233-233 (1995)

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