Solution processed MoO3 interfacial layer for organic photovoltaics prepared by a facile synthesis method.

Solution processed MoO3 interfacial layer for organic photovoltaics prepared by a facile synthesis method.

Advanced materials (Deerfield Beach, Fla.) (2012-04-11)

Seiichiro Murase, Yang Yang

要旨

An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to that using a conventional PEDOT:PSS layer without annealing at an elevated temperature.

材料

製品番号

ブランド

製品内容

267856

Sigma-Aldrich

酸化モリブデン(VI), ACS reagent, ≥99.5%

203815

Sigma-Aldrich

酸化モリブデン(VI), 99.97% trace metals basis

M0753

Sigma-Aldrich

酸化モリブデン(VI), ReagentPlus^®, ≥99.5%

775703

Sigma-Aldrich

酸化モリブデン(VI), nanopowder, 100 nm (TEM), 99.5% trace metals basis

69850

Sigma-Aldrich

酸化モリブデン(VI), puriss. p.a., 99.5%