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Hexagonal boron nitride nanomechanical resonators with spatially visualized motion.

Microsystems & nanoengineering (2017-07-31)
Xu-Qian Zheng, Jaesung Lee, Philip X-L Feng
要旨

Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report the experimental demonstration of h-BN 2D nanomechanical resonators vibrating at high and very high frequencies (from ~5 to ~70 MHz), and investigations of the elastic properties of h-BN by measuring the multimode resonant behavior of these devices. First, we demonstrate a dry-transferred doubly clamped h-BN membrane with ~6.7 nm thickness, the thinnest h-BN resonator known to date. In addition, we fabricate circular drumhead h-BN resonators with thicknesses ranging from ~9 to 292 nm, from which we measure up to eight resonance modes in the range of ~18 to 35 MHz. Combining measurements and modeling of the rich multimode resonances, we resolve h-BN's elastic behavior, including the transition from membrane to disk regime, with built-in tension ranging from 0.02 to 2 N m-1. The Young's modulus of h-BN is determined to be E Y≈392 GPa from the measured resonances. The ultrasensitive measurements further reveal subtle structural characteristics and mechanical properties of the suspended h-BN diaphragms, including anisotropic built-in tension and bulging, thus suggesting guidelines on how these effects can be exploited for engineering multimode resonant functions in 2D NEMS transducers.

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Sigma-Aldrich
Monolayer hexagonal Boron Nitride (hBN) on copper foil, size 6 in. (6 in.) × 150 mm (150 mm)
Sigma-Aldrich
Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer, diam. 100 mm (4 in.)