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アッセイ
99.9% trace metals basis
フォーム
solid
反応適合性
core: yttrium
抵抗性
57 μΩ-cm, 20°C
直径×厚み
2.00 in. × 0.25 in.
bp
3338 °C (lit.)
mp
1522 °C (lit.)
密度
4.469 g/mL at 25 °C (lit.)
SMILES記法
[Y]
InChI
1S/Y
InChI Key
VWQVUPCCIRVNHF-UHFFFAOYSA-N
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アプリケーション
Yttrium sputtering target can be used for physical vapor deposition of thin films of yttria stabilized zirconia layers for IT-SOFC. Yttrium containing thin films also find applications as thermal barrier and protective coatings, example in thermoelectric devices.
保管分類コード
11 - Combustible Solids
WGK
WGK 3
引火点(°F)
Not applicable
引火点(℃)
Not applicable
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資料
Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.
Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
ライフサイエンス、有機合成、材料科学、クロマトグラフィー、分析など、あらゆる分野の研究に経験のあるメンバーがおります。.
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