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Sigma-Aldrich

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chips, 99.999% trace metals basis

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About This Item

经验公式（希尔记法）:
Ge
CAS号:
7440-56-4
分子量:
72.64
EC號碼:
231-164-3
MDL號碼:
MFCD00085310
分類程式碼代碼:
12141716
PubChem物質ID:
24855958
NACRES:
NA.23

化驗

99.999% trace metals basis

形狀

chips

電阻係數

53 Ω-cm, 20°C

bp

2830 °C (lit.)

mp

937 °C (lit.)

密度

5.35 g/mL at 25 °C (lit.)

SMILES 字串

[Ge]

InChI

1S/Ge

InChI 密鑰

GNPVGFCGXDBREM-UHFFFAOYSA-N

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相关类别

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

dust mask type N95 (US), Eyeshields, Gloves

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分析证书(COA)

Lot/Batch Number
MKCM4696
MKCJ6836
MKCD5502
MKCC0673
MKBX0687V

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Lu Dai et al.
Nanoscale, 5(3), 971-976 (2012-12-15)
The controllable fabrication of self-scrolling SiGe/Si/Cr helical nanoribbons on Si(111) substrates is investigated. The initial lateral etching profile of the Si(111) substrates shows a 2-fold rotational symmetry using 4% ammonia solution, which provides guidance for initial scrolling of one-end-fixed nanoribbons
W Streyer et al.
Optics express, 21(7), 9113-9122 (2013-04-11)
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of
Maurizio Mattesini et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035601-035601 (2012-12-12)
The magnetic properties, electronic band structure and Fermi surfaces of the hexagonal Cr(2)GeC system have been studied by means of both generalized gradient approximation (GGA) and the +U corrected method (GGA + U). The effective U value has been computed within the
Jin Liu et al.
Dalton transactions (Cambridge, England : 2003), 42(14), 5092-5099 (2013-02-13)
In this study, Zn2GeO4 hollow spheres were successfully fabricated by a template-engaged approach using zinc hydroxide carbonate (Zn4CO3(OH)6·H2O, ZHC) spheres as the template. During the hydrothermal process, Zn(2+) dissolved from the surface of the ZHC spheres could rapidly react with
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in
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