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241903

Sigma-Aldrich

Aluminum nitride

powder, 10 μm, ≥98%

Sinônimo(s):

Aluminium nitride, Azanylidynealumane

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About This Item

Fórmula linear:
AlN
Número CAS:
Peso molecular:
40.99
Número CE:
Número MDL:
Código UNSPSC:
12352300
ID de substância PubChem:
NACRES:
NA.23

Ensaio

≥98%

forma

powder

tamanho de partícula

10 μm

pf

>2200 °C (lit.)

densidade

3.26 g/mL at 25 °C (lit.)

cadeia de caracteres SMILES

N#[Al]

InChI

1S/Al.N

chave InChI

PIGFYZPCRLYGLF-UHFFFAOYSA-N

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Descrição geral

Aluminum Nitride(AlN) is a non-oxide semiconductor material with a hexagonal Wurtzite crystal structure. It has a wide direct bandgap of 6.12 eV. AIN is a suitable additive in making thermal grease and electric cable insulation owing to its very high thermal conductivity (300 W/(m. K)) and electrical resistivity. It is also used in microelectronics, electroluminescent devices, and sensors because of its non-toxicity, superior thermal, electrical, mechanical, and chemical properties.

Aplicação

Aluminum Nitride can be used as a:
  • ceramic material in the preparation of nano capsulated phase change material for building thermal management systems.
  • matrix in the preparation of metacomposites along with graphene platelets to improve their thermal conductive properties.
  • foaming agent in the preparation of foam glass using glass waste.
It is also used to prepare ceramic matrix composite material along with molybdenum to generate high-energy X-rays.

Pictogramas

Health hazardEnvironment

Palavra indicadora

Danger

Frases de perigo

Declarações de precaução

Classificações de perigo

Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation

Órgãos-alvo

Lungs

Código de classe de armazenamento

4.3 - Hazardous materials, which set free flammable gases upon contact with water

Classe de risco de água (WGK)

WGK 3

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable

Equipamento de proteção individual

dust mask type N95 (US), Eyeshields, Gloves


Certificados de análise (COA)

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Novel hybrid composite phase change materials with high thermal performance based on aluminium nitride and nanocapsules
Lu Wang, et al.
Energy, 238, 121775-121775 (2022)
Band structure and fundamental optical transitions in wurtzite AlN
Li, Jing, et al.
Applied Physics Letters, 83(25), 5163-5165 (2003)
Mohammad T Baei et al.
Journal of molecular modeling, 18(9), 4477-4489 (2012-05-31)
Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Geometry optimizations were carried out at the B3LYP/6-31G* level
Norio Iizuka et al.
Optics express, 17(25), 23247-23253 (2010-01-07)
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size
Javad Beheshtian et al.
Journal of molecular modeling, 18(10), 4745-4750 (2012-06-09)
Single-walled aluminum nitride nanotubes (AlNNTs) are introduced as an electronic sensor for detection of sulfur dioxide (SO₂) molecules based on density functional theory calculations. The proposed sensor benefits from several advantages including high sensitivity: HOMO-LUMO energy gap of the AlNNT

Artigos

Conducting polymers such as polyaniline, polythiophene and polyfluorenes are now much in the spotlight for their applications in organic electronics and optoelectronics.

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