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203424

Sigma-Aldrich

Indium(III)-oxid

99.998% trace metals basis

Synonym(e):

Diindium trioxide, Indium sesquioxide

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About This Item

Empirische Formel (Hill-System):
In2O3
CAS-Nummer:
1312-43-2
Molekulargewicht:
277.63
EG-Nummer:
215-193-9
MDL-Nummer:
MFCD00011060
UNSPSC-Code:
12352303
PubChem Substanz-ID:
24852170
NACRES:
NA.23

Dampfdruck

<0.01 mmHg ( 25 °C)

Qualitätsniveau

100

Assay

99.998% trace metals basis

Form

powder

Eignung der Reaktion

reagent type: catalyst
core: indium

Dichte

7.18 g/mL at 25 °C (lit.)

Anwendung(en)

battery manufacturing

SMILES String

O=[In]O[In]=O

InChI

1S/2In.3O

InChIKey

SHTGRZNPWBITMM-UHFFFAOYSA-N

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Anwendung

  • Synthesis and Characterization: The development of gold nanoclusters on the surface of tin and indium oxide films, synthesizing new materials for advanced applications (Korotcenkov et al., 2014).
  • Photocatalysis: Using nitrogen/sulfur-codoped carbon-coated indium oxide nanoparticles as excellent photocatalysts, providing insights into environmental and energy applications (Sun et al., 2019).

Lagerklassenschlüssel

11 - Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

dust mask type N95 (US), Eyeshields, Gloves

Hier finden Sie alle aktuellen Versionen:

Analysenzertifikate (COA)

Lot/Batch Number
MKCQ8335
MKCP3242
MKCL8029
MKCK1292
MKBW5152V

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Indium(III)-sulfat anhydrous, &#8805;98.0% (T)

Sigma-Aldrich

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Indium(III)-sulfat

Indium(III)-chlorid 99.999% trace metals basis

Sigma-Aldrich

203440

Indium(III)-chlorid

Indium powder, 99.99% trace metals basis

Sigma-Aldrich

277959

Indium

Indium(III)-Acetylacetonat &#8805;99.99% trace metals basis

Sigma-Aldrich

I3300

Indium(III)-Acetylacetonat

Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Ariel Amir et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(6), 1850-1855 (2012-02-09)
Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
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