推薦產品
形狀
crystalline (cubic (a = 5.4037))
wafer (single side polished)
包含
boron as dopant
直徑× 厚度
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
密度
2.33 g/mL at 25 °C (lit.)
半導體屬性
<100>, P-type
SMILES 字串
[Si]
InChI
1S/Si
InChI 密鑰
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
尋找類似的產品？ 前往 產品比較指南
應用
<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.
包裝
1EA refers to 1 wafer and 5EA refers to 5 wafers
物理性質
氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ω-cm
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類（WGK）
nwg
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
Eyeshields, Gloves, type N95 (US)
分析證明 (COA)
輸入產品批次/批號來搜索 分析證明 (COA)。在產品’s標籤上找到批次和批號，寫有 ‘Lot’或‘Batch’.。
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Negative Photoresist Procedure
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