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Key Documents

647675

Sigma-Aldrich

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

同義詞:

Silicon element

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About This Item

線性公式:
Si
CAS號碼:
分子量::
28.09
MDL號碼:
分類程式碼代碼:
12352300
PubChem物質ID:
NACRES:
NA.23

形狀

crystalline (cubic (a = 5.4037))
wafer (single side polished)

包含

boron as dopant

直徑× 厚度

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

半導體屬性

<100>, P-type

SMILES 字串

[Si]

InChI

1S/Si

InChI 密鑰

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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應用

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

包裝

1EA refers to 1 wafer and 5EA refers to 5 wafers

物理性質

氧含量:≤ 1~1.8×1018/cm3;碳含量:≤ 5×1016/cm3;晶棒直径:1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ω-cm

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類(WGK)

nwg

閃點(°F)

Not applicable

閃點(°C)

Not applicable

個人防護裝備

Eyeshields, Gloves, type N95 (US)


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分析證明 (COA)

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Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image

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Negative Photoresist Procedure

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