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等級
ACS reagent
品質等級
化驗
≥98.0%
形狀
crystals, granules or chunks
雜質
≤0.005% insolubles
燃燒殘留物
≤0.01%
pH值
~6 (20 °C)
負離子痕跡
chloride (Cl-): ≤0.001%
sulfate (SO42-): ≤0.005%
正離子痕跡
Fe: ≤5 ppm
heavy metals (as Pb): ≤5 ppm
SMILES 字串
N.F
InChI
1S/FH.H3N/h1H;1H3
InChI 密鑰
LDDQLRUQCUTJBB-UHFFFAOYSA-N
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應用
水热法合成配合物 NaHoF 4 和 NaEuF 4 具有萤石结构,对固体激光器、光致发光和磁特性具有重要意义。
訊號詞
Danger
危險分類
Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral
儲存類別代碼
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
水污染物質分類(WGK)
WGK 1
閃點(°F)
does not flash
閃點(°C)
does not flash
Self-organized TiO2 nanotubes prepared in ammonium fluoride containing acetic acid electrolytes.
Electrochemical Communications, 7(6), 576-580 (2005)
Phase transition in ammonium fluoride.
J. Chem. Phys. , 34(1), 346-347 (1961)
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
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