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蒸汽壓力
<0.01 mmHg ( 537.2 °C)
化驗
99.95% trace metals basis
形狀
foil
自燃溫度
572 °F
反應適用性
core: tantalum
電阻係數
13.5 μΩ-cm, 20°C
直徑× 厚度
2.00 in. × 0.25 in.
bp
5425 °C (lit.)
mp
2996 °C (lit.)
密度
16.69 g/cm3 (lit.)
SMILES 字串
[Ta]
InChI
1S/Ta
InChI 密鑰
GUVRBAGPIYLISA-UHFFFAOYSA-N
應用
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition.
儲存類別代碼
11 - Combustible Solids
水污染物質分類（WGK）
nwg
閃點（°F）
Not applicable
閃點（°C）
Not applicable
Kostantinidis; S.;
The European Physical Journal - Applied Physics, 56(2), 24002/1-24002/1 (2011)
Helmersson; U.;
Thin Solid Films, 513(1-2), 1-1 (2006)
Robert Cohen
American journal of orthopedics (Belle Mead, N.J.), 31(4), 216-217 (2002-05-15)
Conventional materials used for orthopedic reconstruction implants limit the design of new and improved implants. Solid metal is rigid. Porous fixation surfaces have low volumetric porosity available for biologic ingrowth and low frictional characteristics for initial implant stability and have
J Black
Clinical materials, 16(3), 167-173 (1993-12-09)
A detailed literature search was carried out to define the current knowledge about the biological performance of tantalum. The pure metal appears, to a great degree, to be inert both in vivo and in vitro. Both the pure metal and
Jian Lu et al.
Zhongguo xiu fu chong jian wai ke za zhi = Zhongguo xiufu chongjian waike zazhi = Chinese journal of reparative and reconstructive surgery, 26(2), 244-247 (2012-03-13)
To review the progress in the treatment of bone defect by porous tantalum implant. Recent literature was extensively reviewed and summarized, concerning the treatment method of bone defect by porous tantalum implant. By right of their unique properties, porous tantalum
商品
Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition
Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
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