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Merck

255750

Sigma-Aldrich

氧化锌

99.99% trace metals basis

别名:

Zinc monoxide, Zinc white

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About This Item

线性分子式:
ZnO
CAS号:
分子量:
81.39
EC號碼:
MDL號碼:
分類程式碼代碼:
12352300
PubChem物質ID:
NACRES:
NA.23

品質等級

化驗

99.99% trace metals basis

形狀

powder

SMILES 字串

O=[Zn]

InChI

1S/O.Zn

InChI 密鑰

XLOMVQKBTHCTTD-UHFFFAOYSA-N

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一般說明

氧化锌是一种多功能材料,具有电化学偶联系数高、化学稳定性好、辐射吸收范围广、生物相容性好等独特性能。它也是一种宽带隙(3.37 eV)半导体,用于光电子、陶瓷和激光技术。由于其压电和热释电特性,它可以用作传感器、能量发生器和制氢光催化剂。

應用

氧化锌可作为起始材料用于制备:
  • 适用于射频能量收集电路的肖特基二极管。
  • 传感应用的 ZnO 纳米结构。例如,它可以用于制造高选择性二甲苯传感器的 Cr2O3-ZnCr2O4 异质纳米结构。
用于制备NaZnSiO3OH,一种新型手性骨架材料,其在离子交换、吸附或催化方面具有潜在的应用价值。

象形圖

Environment

訊號詞

Warning

危險聲明

防範說明

危險分類

Aquatic Acute 1 - Aquatic Chronic 1

儲存類別代碼

11 - Combustible Solids

水污染物質分類(WGK)

WGK 2

閃點(°F)

Not applicable

閃點(°C)

Not applicable

個人防護裝備

Eyeshields, Gloves


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A. M. Healey et al.
Inorganic chemistry, 38(3), 455-458 (2001-10-25)
The structure of NaZnSiO(3)OH, synthesized hydrothermally by reaction of Na(2)ZnSiO(4) and NaOH, has been determined from single-crystal X-ray and powder neutron diffraction data (orthorhombic, space group P2(1)2(1)2(1,) a = 7.6872(2) Å, b = 9.3899(2) Å, c = 5.155(1) Å, Z
Kwang Gug Yim et al.
Journal of nanoscience and nanotechnology, 13(5), 3586-3590 (2013-07-19)
ZnO nanostructures were grown on Si (111) substrates by a hydrothermal method. Prior to growing the ZnO nanostructures, ZnO seed layers with different post-heat temperatures were prepared by a spin-coating process. Then, the ZnO nanostructures were annealed at 500 degrees
Xiaolong Li et al.
Journal of nanoscience and nanotechnology, 13(8), 5859-5863 (2013-07-26)
In this study, we present the synthesis of ZnO nanowire by hydrothermal process through reutilization of sludge from soy sauce wastewater electrochemical treatment. The influences of floc content and caramel pigment concentration on the morphologies of ZnO were studied. The
Hyeong Pil Kim et al.
Journal of nanoscience and nanotechnology, 13(7), 5142-5147 (2013-08-02)
Solution processed cathode organic photovoltaic cells (OPVs) utilizing thin layer of ZnO with 27% increase in power conversion efficiency (PCE) to control devices have been demonstrated. Devices without the presence of ZnO layer have much lower PCE than the ones
Min Su Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3582-3585 (2013-07-19)
Metal catalyst-free ZnO nanorods were grown on PS with buffer layers grown at 450 degrees C by plasma-assisted molecular beam epitaxy. Room temperature and temperature-dependent photoluminescence were carried out to investigate the optical properties of the ZnO nanorods with the

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