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品質等級
化驗
99.999% trace metals basis
形狀
powder
SMILES 字串
O=[Zn]
InChI
1S/O.Zn
InChI 密鑰
XLOMVQKBTHCTTD-UHFFFAOYSA-N
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一般說明
ZnO 是具有宽带隙的半导体。其结构中的点缺陷决定了氧化物的电导率。用Al、In 和 Ga 掺杂这些点缺陷可得到高导电性的 n –型氧化锌。也可通过在还原环境中对氧化物进行退火，实现无缺陷的ZnO。该化合物还具有出色的光传输性能。掺杂的ZnO可以形成透明导体，用于各种基于能量的应用。1
應用
仔猪的饮食中添加了氧化锌，以提高仔猪的生长性能和健康水平。
用于制备NaZnSiO3OH，一种新型手性骨架材料，其在离子交换、吸附或催化方面具有潜在的应用价值。
訊號詞
Warning
危險聲明
危險分類
Aquatic Acute 1 - Aquatic Chronic 1
儲存類別代碼
11 - Combustible Solids
水污染物質分類（WGK）
WGK 2
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
Eyeshields, Gloves
其他客户在看
The Zinc Concentration in the Diet and the Length of the Feeding Period Affect the Methylation Status of the ZIP4 Zinc Transporter Gene in Piglets
Karweina D, et al.
PLoS ONE, 10(11), e0143098-e0143098 (2015)
A. M. Healey et al.
Inorganic chemistry, 38(3), 455-458 (2001-10-25)
The structure of NaZnSiO(3)OH, synthesized hydrothermally by reaction of Na(2)ZnSiO(4) and NaOH, has been determined from single-crystal X-ray and powder neutron diffraction data (orthorhombic, space group P2(1)2(1)2(1,) a = 7.6872(2) Å, b = 9.3899(2) Å, c = 5.155(1) Å, Z
Kwang Gug Yim et al.
Journal of nanoscience and nanotechnology, 13(5), 3586-3590 (2013-07-19)
ZnO nanostructures were grown on Si (111) substrates by a hydrothermal method. Prior to growing the ZnO nanostructures, ZnO seed layers with different post-heat temperatures were prepared by a spin-coating process. Then, the ZnO nanostructures were annealed at 500 degrees
Xiaolong Li et al.
Journal of nanoscience and nanotechnology, 13(8), 5859-5863 (2013-07-26)
In this study, we present the synthesis of ZnO nanowire by hydrothermal process through reutilization of sludge from soy sauce wastewater electrochemical treatment. The influences of floc content and caramel pigment concentration on the morphologies of ZnO were studied. The
Hyeong Pil Kim et al.
Journal of nanoscience and nanotechnology, 13(7), 5142-5147 (2013-08-02)
Solution processed cathode organic photovoltaic cells (OPVs) utilizing thin layer of ZnO with 27% increase in power conversion efficiency (PCE) to control devices have been demonstrated. Devices without the presence of ZnO layer have much lower PCE than the ones
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An article concerning self-propagating reactions induced by mechanical alloying, presented by Sigma-Aldrich.com.
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