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579211

Sigma-Aldrich

Tetrakis(dimethylamido)zirconium(IV)

electronic grade, ≥99.99% trace metals basis

Synonym(s):

TDMAZ, Tetrakis(dimethylamino)zirconium(IV)

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About This Item

Linear Formula:
[(CH3)2N]4Zr
CAS Number:
19756-04-8
Molecular Weight:
267.53
MDL number:
MFCD00239502
UNSPSC Code:
12352103
PubChem Substance ID:
24880977
NACRES:
NA.23

grade

electronic grade

Assay

≥99.99% trace metals basis

form

solid

reaction suitability

core: zirconium

mp

57-60 °C (lit.)

storage temp.

2-8°C

SMILES string

CN(C)[Zr](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Zr/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

DWCMDRNGBIZOQL-UHFFFAOYSA-N

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Application

Tetrakis(dimethylamido) zirconium (IV) may be used as a precursor for atomic layer deposition of zirconium which find applications ranging from gas sensors to high-k dielectrics in microelectronics.

Pictograms

FlameExclamation mark
GHS02,GHS07

Signal Word

Danger

Hazard Statements

H228,H261,H315,H319,H335

Hazard Classifications

Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3 - Water-react 2

Target Organs

Respiratory system

Supplementary Hazards

EUH014

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

No data available

Flash Point(C)

No data available

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Atomic layer deposition of ZrO2 and HfO2 nanotubes by template replication
Gu D, et al.
Electrochemical and Solid-State Letters, 12.4, K25-K28 (2009)
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films.
Hausmann DM & Gordon RG
Journal of Crystal Growth, 249.1, 251-261 (2003)

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