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469858

Sigma-Aldrich

Tetrakis(dimethylamido)titanium(IV)

99.999% trace metals basis

Synonym(s):

TDMAT, Tetrakis(dimethylamino)titanium(IV)

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About This Item

Linear Formula:
[(CH3)2N]4Ti
CAS Number:
Molecular Weight:
224.17
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

Quality Level

Assay

99.999% trace metals basis

form

liquid

reaction suitability

core: titanium

bp

50 °C/0.5 mmHg (lit.)

density

0.947 g/mL at 25 °C (lit.)

SMILES string

CN(C)[Ti](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Ti/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

MNWRORMXBIWXCI-UHFFFAOYSA-N

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General description

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Application

Tetrakis(dimethylamido)titanium(IV) (TDMAT) is a precursor to titanium nitride (TiN) thin films by organometallic chemical vapor deposition (OMCVD)and titanium dioxide thin films by atomic layer deposition (ALD).TDMAT undergoes exothermal reaction with excess cyclopentadiene to yield tris(dimethylamido)(η5-cyclopentadienyl)titanium(IV).

Pictograms

FlameCorrosion

Signal Word

Danger

Hazard Statements

Hazard Classifications

Flam. Liq. 2 - Skin Corr. 1B - Water-react 1

Supplementary Hazards

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

-22.0 °F - closed cup

Flash Point(C)

-30 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Tianshuo Zhao et al.
Proceedings of the National Academy of Sciences of the United States of America, 118(7) (2021-02-10)
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Microstructure and elastic properties of atomic layer deposited TiO 2 anatase thin films.
Borgese L, et al.
Acta Materialia, 59(7), 2891-2900 (2011)
Young modulus and Poisson ratio measurements of TiO 2 thin films deposited with atomic layer deposition.
Borgese L, et al.
Surface and Coatings Technology, 206(8), 2459-2463 (2012)
Improving performance via blocking layers in dye-sensitized solar cells based on nanowire photoanodes.
Li L, et al.
ACS Applied Materials & Interfaces, 7(23), 12824-12831 (2015)
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