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form
powder
particle size
-200 mesh
mp
2700 °C (lit.)
density
3.22 g/mL at 25 °C (lit.)
SMILES string
[C-]#[Si+]
InChI
1S/CSi/c1-2
InChI key
HBMJWWWQQXIZIP-UHFFFAOYSA-N
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General description
Silicon carbide (SiC) is a semiconductor based material that consists of a closed packed stacking of double layers of silicon and carbon. It has an excellent thermo-mechanical property that makes it useful in a variety of electronic and optoelectronic applications.
Application
SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices(OLEDs), UV detectors, high temperature electronics (nuclear electronics), high frequency devices
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
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Find documentation for the products that you have recently purchased in the Document Library.
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
Properties of silicon carbide (1995)
Optical polarization of nuclear spins in silicon carbide
Physical Review Letters, 114(24), 247603-247603 (2015)
4H-SiC UV photo detectors with large area and very high specific detectivity
IEEE J. Quant. Elect., 40(9), 1315-1320 (2004)
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
IEEE Transactions on Power Electronics, 29(5), 2606-2617 (2013)
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