추천 제품
설명
Dirac point:< 50 V
Gate Oxide material: SiO2
Gate Oxide thickness: 90 nm
Graphene field-effect mobility: >1000 cm2/V·s
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm2
Metallization: Chromium 2 nm/Gold 50 nm
Monolayer CVD grown Graphene based field effect transistors (FET) S10
Residual charge carrier density: <2 x 1012 cm-2
Resistivity of substrate: 1-10 Ω·cm
Yield >75%
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일반 설명
Device configuration:
This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.
This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.
Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.
애플리케이션
- Graphene device research
- FET based sensor research for active materials deposited on graphene
- Chemical sensors
- Biosensors
- Bioelectronics
- Magnetic sensors
- Photodetectors
GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.
특징 및 장점
Device Features:
- State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
- Devices are not encapsulated and can be functionalized by additives
- Perfect platform for sensor research and development
- 36 individual graphene FETs per chip
- Mobilities typically > 1000 cm2/V·s
주의사항
Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:
To maintain the quality of the devices, we recommend taking the following precautions:
- Be careful when handling the graphene FET chip.
- Tweezers should not contact the device area directly.
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
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Wafer-scale statistical analysis of graphene field-effect transistors-part II: analysis of device properties
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문서
Synthesis and Applications of Graphene Nanoribbons Synthesized
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