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Merck
모든 사진(2)

Key Documents

900442

Sigma-Aldrich

Graphene/PEDOT:PSS hybrid ink

dispersion in DMF, avg. no. of layers, 1 ‑ 3

동의어(들):

Conductive ink, Electrochemically exfoliated graphene ink, G/PEDOT:PSS, Graphene ink

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About This Item

UNSPSC 코드:
12352401
NACRES:
NA.23

Quality Level

형태

dispersion (in DMF)

특징

avg. no. of layers 1 ‑ 3

농도

0.2 mg/mL (PEDOT:PSS)
1 mg/mL (electrochemically exfoliated graphene)

시트 저항성

500 Ω/sq, 20 nm film: 80% transmittance

일반 설명

  • Graphene preparation method: Electrochemical exfoliation.
  • Graphene thickness by AFM: 80%, 1-3 layers.
  • Sheet size by AFM: 10 μm.
  • Oxygen content: 7.5% (by XPS) (C/O-ratio: 12.3).
  • Raman I_D/I_G ratio: 0.4.
  • Sheet resistance: 4.8 kΩ/sq.
  • Typical properties of films produced thereof (after spray coating):
a) 11 nm film: 90% transmittance, 1200 Ω/sq (as made).
b) 20 nm film: 80% transmittance, 500 Ω/sq (as made).

픽토그램

FlameHealth hazardExclamation mark

신호어

Danger

유해 및 위험 성명서

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Liq. 3 - Repr. 1B

Storage Class Code

3 - Flammable liquids

WGK

WGK 2

Flash Point (°F)

136.4 °F

Flash Point (°C)

58 °C


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Peng You et al.
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Zhaoyang Liu et al.
Advanced materials (Deerfield Beach, Fla.), 27(4), 669-675 (2014-12-03)
A novel solution fabrication of large-area, highly conductive graphene films by spray-coating of a hybrid ink of exfoliated graphene (EG)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (PH1000) is demonstrated. The fabricated graphene films exhibit excellent mechanical properties, thus enabling their application as bottom electrodes in
Transparent graphene/PEDOT-PSS composite films as counter electrodes of dye-sensitized solar cells.
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Ultrathin printable graphene supercapacitors are demonstrated, based on solution-processed electrochemically exfoliated graphene hybrid films on an ultrathin poly(ethylene terephthalate) substrate, exhibiting an unprecedented volumetric capacitance of 348 F cm(-3) , an ultrahigh scan rate of 2000 V s(-1) , and

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