모든 사진(1)
About This Item
Linear Formula:
Si(CH3)4
CAS Number:
Molecular Weight:
88.22
Beilstein:
1696908
EC Number:
MDL number:
UNSPSC 코드:
12352103
PubChem Substance ID:
NACRES:
NA.22
bp:
26-28 °C (lit.)
vapor pressure:
11.66 psi ( 20 °C)
추천 제품
vapor pressure
11.66 psi ( 20 °C)
분석
≥99.0% (GC)
양식
liquid
autoignition temp.
842 °F
기술
GC/GC: suitable
refractive index
n20/D 1.358 (lit.)
n20/D 1.359
bp
26-28 °C (lit.)
mp
−99 °C (lit.)
density
0.648 g/mL at 25 °C (lit.)
저장 온도
2-8°C
SMILES string
C[Si](C)(C)C
InChI
1S/C4H12Si/c1-5(2,3)4/h1-4H3
InChI key
CZDYPVPMEAXLPK-UHFFFAOYSA-N
유사한 제품을 찾으십니까? 방문 제품 비교 안내
애플리케이션
Tetramethylsilane can be used as a silicon precursor for the synthesis of silicon doped diamond-like carbon (DLC-Si) films and silicon carbide (SiC) bulk crystals. It can also be used as a hydrocarbon substrate to study intermolecular C-H activation chemistry.
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Flam. Liq. 1
Storage Class Code
3 - Flammable liquids
WGK
WGK 3
Flash Point (°F)
-16.6 °F - closed cup
Flash Point (°C)
-27 °C - closed cup
개인 보호 장비
Eyeshields, Faceshields, Gloves
이미 열람한 고객
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Bendavid A, et al.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
Roy E Hoffman
Journal of magnetic resonance (San Diego, Calif. : 1997), 163(2), 325-331 (2003-08-14)
The chemical shift of TMS is commonly assumed to be zero. However, it varies by over 1 ppm for 1H and 4 ppm for 13C and shows a correlation with the physical properties of the solvent. Using the commonly accepted
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