Skip to Content
Merck
All Photos(1)

Key Documents

View All Documentation

Safety Information

767492

Sigma-Aldrich

Silicon

sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis

Sign Into View Organizational & Contract Pricing
All Photos(1)

About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
EC Number:
231-130-8
MDL number:
MFCD00085311
UNSPSC Code:
12352103
PubChem Substance ID:
329767318
NACRES:
NA.23

Assay

99.999% trace metals basis

form

solid

reaction suitability

core: silicon

diam. × thickness

2.00 in. × 0.25 in.

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

Application

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

767492-1EA:
767492-VAR:
767492-BULK:

Choose from one of the most recent versions:

Certificates of Analysis (COA)

Lot/Batch Number
MKCL4008
MKBN4022V

Don't see the Right Version?

If you require a particular version, you can look up a specific certificate by the Lot or Batch number.

Search for a COA

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Kostantinidis, S.; et al.
The European Physical Journal - Applied Physics, 56, 24002/1-24002/1 (2011)
Helmersson; U.; et al.
Thin Solid Films, 513, 1-1 (2006)
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
View All Related Papers

Articles

Recent Progress in Spintronic Materials

Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.

Nanowire Synthesis: From Top-Down to Bottom-Up

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service