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393541

Sigma-Aldrich

Gallium(III) acetylacetonate

99.99% trace metals basis

Sinonimo/i:

Ga(acac)3, Gallium(III) 2,4-pentanedionate

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About This Item

Formula condensata:
[CH3COCH=C(O-)CH3]3Ga
Numero CAS:
14405-43-7
Peso molecolare:
367.05
Numero CE:
238-377-0
Numero MDL:
MFCD00013492
Codice UNSPSC:
12352103
ID PubChem:
24864524
NACRES:
NA.23

Livello qualitativo

100

Saggio

99.99% trace metals basis

Forma fisica

solid

Impiego in reazioni chimiche

core: gallium
reagent type: catalyst

Punto di fusione

196-198 °C (dec.) (lit.)

Stringa SMILE

CC(=O)\C=C(\C)O[Ga](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O

InChI

1S/3C5H8O2.Ga/c3*1-4(6)3-5(2)7;/h3*3,6H,1-2H3;/q;;;+3/p-3/b3*4-3-;
ZVYYAYJIGYODSD-LNTINUHCSA-K

Categorie correlate

Descrizione generale

Gallium(III) acetylacetonate is a sol-gel precursor used to synthesize high-purity GaN nano-wires, nano-needles, and gallium oxide thin films, which are relevant to applications in batteries, fuel cells, and solar cells.

Applicazioni

Gallium(III) acetylacetonate can be used:
  • As a precursor to synthesize nanocrystalline gallium oxide spinels via solvothermal process for various applications like photocatalysis, battery cathode materials and electrocatalysis.
  • To fabricate LiGa alloy layer on Li metal anode from in-situ electroreduction. It suppresses the anode dendrite formation in lithium-sulfur batteries.
  • To prepare highly efficient gallium-platinum (GaPt3) nanoparticles hot-solvent synthesis which act as electrocatalysts for hydrogen evolution reaction.
  • To synthesize γ-Ga2O3 nanocrystals for fabricating electron-transporting layer for perovskite solar cells. It forms effective interfacial connections with the perovskite top layer, enhancing the efficiency of charge transport.

Pittogrammi

Health hazardExclamation mark
GHS08,GHS07

Avvertenze

Warning

Classi di pericolo

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Carc. 2 - Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

Organi bersaglio

Respiratory system

Codice della classe di stoccaggio

11 - Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

dust mask type N95 (US), Eyeshields, Gloves

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Certificati d'analisi (COA)

Lot/Batch Number
MKCP4742
MKCN6113
MKCM4281
MKCL2814
MKCK3107

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Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor
Chang KW,Wu JJ
Applied Physics. A, Materials Science & Processing, 77(6), 769-774 null
Growth of gallium oxide film from gallium acetylacetonate by atomic layer epitaxy.
Nieminen M,et al
Journal of Materials Chemistry, 6, 27-31 null
LowTemperature Catalytic Synthesis of Gallium Nitride Nanowires
The Journal of Physical Chemistry B, 106(32), 7796-7799 (2002)
Structural Crystallography and Crystal Chemistry
Dymock K and Palenik GJ
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