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264032

Sigma-Aldrich

Indium

powder, −100 mesh, 99.99% trace metals basis

Sinonimo/i:

Indium element

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About This Item

Formula empirica (notazione di Hill):
In
Numero CAS:
7440-74-6
Peso molecolare:
114.82
Numero CE:
231-180-0
Numero MDL:
MFCD00134048
Codice UNSPSC:
12141719
ID PubChem:
24855900
NACRES:
NA.23

Tensione di vapore

<0.01 mmHg ( 25 °C)

Livello qualitativo

100

Saggio

99.99% trace metals basis

Forma fisica

powder

Resistività

8.37 μΩ-cm

Dimensione particelle

−100 mesh

Punto di fusione

156.6 °C (lit.)

Densità

7.3 g/mL at 25 °C (lit.)

Stringa SMILE

[In]

InChI

1S/In
APFVFJFRJDLVQX-UHFFFAOYSA-N

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Descrizione generale

Indium,a rare and stable element, exhibits exceptional properties such as high thermaland electrical conductivity. It finds application in diverse alloys, batteryproduction, and the synthesis of indium tin oxide, essential for transparentelectrodes in LCDs and touchscreens. Additionally, Indium is utilized in theproduction of solar cells, LEDs, and other optoelectronic devices.

Applicazioni


  • Indium-containing semiconductors: Discusses the role of indium in semiconductor technology, relevant for both academia and material science, focusing on its application in indium-tin oxide and other indium compounds (Schwarz‐Schampera, 2014).

  • Recovery of indium from liquid crystal displays: This article presents methods for the recovery of indium from waste electronics, an area of significant interest for sustainable chemistry and materials science (Rocchetti et al., 2016).

  • The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants: Explores the chemical properties and reactions of indium in various oxidation states, relevant to environmental and materials chemistry (Detweiler et al., 2016).

Pittogrammi

FlameExclamation mark
GHS02,GHS07

Avvertenze

Danger

Indicazioni di pericolo

H228,H315,H319,H332,H335

Classi di pericolo

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Organi bersaglio

Respiratory system

Codice della classe di stoccaggio

4.1B - Flammable solid hazardous materials

Classe di pericolosità dell'acqua (WGK)

WGK 3

Dispositivi di protezione individuale

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

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Certificati d'analisi (COA)

Lot/Batch Number
MKCL1203
MKBW2768V
MKBS5966V
MKBQ7276V
MKBN3569V

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A facile synthesis of 7-amino-3-desacetoxycephalosporanic acid derivatives by indium-mediated reduction of 3-iodomethylcephems in aqueous media.
Chae H, et al.
Tetrahedron Letters, 41(20), 3899-3901 (2000)
Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
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