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264067

Sigma-Aldrich

Indium

wire, diam. 0.45-0.55 mm, 99.995% trace metals basis

Synonym(s):

Indium element

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About This Item

Empirical Formula (Hill Notation):
In
CAS Number:
7440-74-6
Molecular Weight:
114.82
EC Number:
231-180-0
MDL number:
MFCD00134048
UNSPSC Code:
12141719
PubChem Substance ID:
24855903
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Assay

99.995% trace metals basis

form

wire

resistivity

8.37 μΩ-cm

diam.

0.45-0.55 mm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Quantity

2.8 g = 2 m; 14 g = 10 m

Pictograms

Health hazard
GHS08

Signal Word

Danger

Hazard Statements

H372

Precautionary Statements

P260 - P264 - P270 - P314 - P501

Hazard Classifications

STOT RE 1 Inhalation

Target Organs

Lungs

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
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