推荐产品
描述
Bandgap: 5.97 eV
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Orientation: <1-0-0>
Raman Peak: 1370 /cm-1
Substrate Type/Doping: P/B
hBN Coverage: 100% with sporadic adlayers
1-25 Ω-cm
品質等級
直徑
150 mm (6 in.)
尺寸
300 nm , Oxide
厚度
675 ± 25 μm , Wafer
粒徑
>4 μm
InChI
1S/BN/c1-2
InChI 密鑰
PZNSFCLAULLKQX-UHFFFAOYSA-N
正在寻找类似产品? 访问 产品对比指南
應用
Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices †††
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- Insulating/transparent coatings
儲存和穩定性
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類(WGK)
WGK 3
閃點(°F)
Not applicable
閃點(°C)
Not applicable
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Materials, 12(23) (2019)
Piezoelectricity in Monolayer Hexagonal Boron Nitride
Advanced Materials, 32 (2020)
我们的科学家团队拥有各种研究领域经验,包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系技术服务部门