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化驗
99.995% trace metals basis
形狀
solid
自燃溫度
860 °F
反應適用性
core: titanium
電阻係數
42.0 μΩ-cm, 20°C
直徑× 厚度
2.00 in. × 0.25 in.
bp
3287 °C (lit.)
mp
1660 °C (lit.)
密度
4.5 g/mL at 25 °C (lit.)
SMILES 字串
[Ti]
InChI
1S/Ti
InChI 密鑰
RTAQQCXQSZGOHL-UHFFFAOYSA-N
應用
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition.
儲存類別代碼
11 - Combustible Solids
水污染物質分類（WGK）
nwg
閃點（°F）
Not applicable
閃點（°C）
Not applicable
Kostantinidis, S.; et al.
The European Physical Journal - Applied Physics, 56, 24002/1-24002/1 (2011)
Helmersson; U.; et al.
Thin Solid Films, 513, 1-1 (2006)
A Kurbad et al.
International journal of computerized dentistry, 16(2), 125-141 (2013-08-13)
This article presents two novel options for lithium-disilicate restorations supported by single-tooth implants. By using a Ti-Base connector, hybrid abutments and hybrid abutment crowns can be fabricated for different implant systems. The latter option in particular is an interesting new
J H Kim et al.
Journal of nanoscience and nanotechnology, 13(7), 4601-4607 (2013-08-02)
Nanocytalline TiN films were deposited on non-alkali glass and Al substrates by reactive DC magnetron sputtering (DCMS) with an electromagnetic field system (EMF). The microstructure and corrosion resistance of the TiN-coated Al substrates were estimated by X-ray diffraction (XRD), scanning
Jinho Shin et al.
Journal of nanoscience and nanotechnology, 13(8), 5807-5810 (2013-07-26)
In this study, hydroxyapatite (HA) was coated on anodized titanium (Ti) surfaces through radio frequency magnetron sputtering in order to improve biological response of the titanium surface. All the samples were blasted with resorbable blasting media (RBM). RBM-blasted Ti surface
商品
Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition
Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
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