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Merck
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文件

755133

Sigma-Aldrich

多层碳纳米管

thin, <5% Metal Oxide(TGA)

别名:

MWNT, 多壁碳纳米管

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About This Item

CAS号:
308068-56-6
分類程式碼代碼:
12352103
NACRES:
NA.23

品質等級

100

形狀

powder

平均直徑×長度

9.5 nm × 1.5 μm , TEM

雜質

<5% Metal Oxide (TGA)

mp

3652-3697 °C (lit.)

密度

~2.1 g/mL at 25 °C (lit.)

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相关类别

一般說明

Multi walled carbon nanotubes (MWNTs, CNTs) were prepared by chemical vapor deposition (CVD). In chemical vapor deposition (CVD), a volatile precursor undergoes thermal decomposition at elevated temperatures to form a solid deposit on a substrate. Compared to other techniques, CVD produces greater yield of carbon nanotubes. Morphology and structure of the nanotubes can be easily tuned using CVD technique. The CNTs formed can be formed in bundles over a catalyst support or in patterns over substrates.1

應用

Applications include:
Electronics
Sensors
Composites
Energy Storage
Study of Life Science system

準備報告

Catalytic Carbon Vapor Deposition (CCVD) Method

法律資訊

Product of Nanocyl, Inc.

儲存類別代碼

11 - Combustible Solids

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

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Wai Li Ling et al.
ACS nano, 5(2), 730-737 (2011-01-11)
The classical pathway of complement is an essential component of the human innate immune system involved in the defense against pathogens as well as in the clearance of altered self-components. Activation of this pathway is triggered by C1, a multimolecular
Dominick J Bindl et al.
ACS nano, 4(10), 5657-5664 (2010-10-07)
Semiconducting single-walled carbon nanotubes (s-SWCNTs) have strong near-infrared and visible absorptivity and exceptional charge transport characteristics, rendering them highly attractive semiconductor absorbers for photovoltaic and photodetector technologies. However, these applications are limited by a poor understanding of how photogenerated charges
Amin Salehi-Khojin et al.
ACS nano, 5(1), 153-158 (2010-12-29)
There has been recent controversy whether the response seen in carbon nanotube (CNT) chemiresistors is associated with a change in the resistance of the individual nanotubes or changes in the resistance of the junctions. In this study, we carry out

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