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Merck

632317

Sigma-Aldrich

氧化铟(III)

nanopowder, <100 nm particle size (TEM), 99.9% trace metals basis

别名:

三氧化二铟, 氧化铟

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About This Item

经验公式(希尔记法):
In2O3
CAS号:
分子量:
277.63
EC號碼:
MDL號碼:
分類程式碼代碼:
12352302
PubChem物質ID:
NACRES:
NA.23

蒸汽壓力

<0.01 mmHg ( 25 °C)

品質等級

化驗

99.9% trace metals basis

形狀

nanopowder

反應適用性

reagent type: catalyst
core: indium

粒徑

<100 nm (TEM)

密度

7.18 g/mL at 25 °C (lit.)

SMILES 字串

O=[In]O[In]=O

InChI

1S/2In.3O

InChI 密鑰

SHTGRZNPWBITMM-UHFFFAOYSA-N

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一般說明

Indium(III)oxide is a versatile compound with significant applications in electronics,optics, and materials science. It is widely employed in the synthesis of transparentconducting oxides (TCOs), particularly for flat-panel displays, and solarcells, due to its electrical conductivity and optical transparency. Insemiconductor technology, it is used for making indium tin oxide (ITO),enhancing the performance of electronic devices, and is sensitive to variousgases, making it suitable for gas sensing applications, particularly indetecting hazardous gases.

應用

  • 胺基修饰表面受阻路易斯对用于CO2光催化:用含有胺基修饰表面受阻路易斯对的氧化铟氢氧化物,增强CO2还原的光催化性能(Q Guan et al., 2024)。
  • 光激发增强气体传感能力:研究通过400 nm紫外光激发法提高金属氧化物(包括氧化铟)半导体化学电阻的气体传感性能(S Paul et al., 2024)。
  • 铟(III)络合物的工业应用和纳米颗粒合成:综述三价铟络合物作为催化剂和前体在各种工业中的应用,以及氧化铟等纳米颗粒的合成(TO Ajiboye et al., 2024)。
  • Ag/In2O3反蛋白石合成:详述银/氧化铟反蛋白石结构的合成和前景,它们因为光学特性具有半导体应用潜力(AV Lyutova et al., 2024)。
  • 光催化生成羟基自由基和锰物种:研究用氧化铟增强高锰酸盐的光催化性能,以在可见光下高效去除微污染物(J Li et al., 2024)

儲存類別代碼

11 - Combustible Solids

水污染物質分類(WGK)

WGK 3

閃點(°F)

Not applicable

閃點(°C)

Not applicable

個人防護裝備

dust mask type N95 (US), Eyeshields, Gloves


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Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Dongjin Lee et al.
Sensors (Basel, Switzerland), 11(10), 9300-9312 (2011-12-14)
We report a conductometric nanoparticle biosensor array to address the significant variation of electrical property in nanomaterial biosensors due to the random network nature of nanoparticle thin-film. Indium oxide and silica nanoparticles (SNP) are assembled selectively on the multi-site channel
K H L Zhang et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 23(33), 334211-334211 (2011-08-05)
Epitaxial films of In(2)O(3) have been grown on Y-stabilised ZrO(2)(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a network of
Mareike V Hohmann et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 23(33), 334203-334203 (2011-08-05)
The ionization potentials of In(2)O(3) films grown epitaxially by magnetron sputtering on Y-stabilized ZrO(2) substrates with (100) and (111) surface orientation are determined using photoelectron spectroscopy. Epitaxial growth is verified using x-ray diffraction. The observed ionization potentials, which directly affect

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