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481769

Sigma-Aldrich

氮化镓

99.9% trace metals basis

别名:

氮化镓, 氮化镓（GaN）

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About This Item

线性分子式:
GaN
CAS号:
25617-97-4
分子量:
83.73
EC號碼:
247-129-0
MDL號碼:
MFCD00016108
分類程式碼代碼:
12352300
PubChem物質ID:
24871779
NACRES:
NA.23

化驗

99.9% trace metals basis

形狀

powder

mp

800 °C (lit.)

SMILES 字串

N#[Ga]

InChI

1S/Ga.N

InChI 密鑰

JMASRVWKEDWRBT-UHFFFAOYSA-N

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應用

氮化镓（GaN）是一种宽带隙半导体材料，可用于各种电子器件的开发，如发光二极管（LED）和场效应晶体管（FET）。它还可用作基于自旋电子学应用的过渡金属掺杂剂。

象形圖

Exclamation mark
GHS07

訊號詞

Warning

危險聲明

H317

危險分類

Skin Sens. 1

儲存類別代碼

11 - Combustible Solids

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

Eyeshields, Faceshields, Gloves, type N95 (US)

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCC3784
MKBZ9624V
MKBT0282V
MKBQ9230V
MKBK7514V

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氮化铝 powder, 10 μm, ≥98%

Sigma-Aldrich

241903

氮化铝

Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating

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