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Merck
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文件

203815

Sigma-Aldrich

氧化钼(VI)

99.97% trace metals basis

别名:

三氧化钼

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About This Item

线性分子式:
MoO3
CAS号:
1313-27-5
分子量:
143.94
EC號碼:
215-204-7
MDL號碼:
MFCD00003469
分類程式碼代碼:
12352300
eCl@ss:
38180807
PubChem物質ID:
24852067
NACRES:
NA.23

品質等級

100

化驗

99.97% trace metals basis

形狀

powder

mp

795 °C (lit.)

應用

battery manufacturing

SMILES 字串

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI 密鑰

JKQOBWVOAYFWKG-UHFFFAOYSA-N

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相关类别

一般說明

氧化钼（VI），也称三氧化钼，是钼和氧的化合物，近似化学式为MoO3。它通常是白色或浅黄色，不过氧化钼（VI）中可能存在大量缺陷，包括氧空位，这使其呈浅蓝色或浅绿色。氧化钼（VI）具有 2,620 °C的高熔点。从化学性质来看，氧化钼（VI）是强氧化剂，具有高功函数。 因此，它可用作化学反应的催化剂以及生产其它钼化合物的起始原料。此外，它还可以添加到色素、玻璃、润滑剂和塑料中。

應用

用于固态合成显著的三元还原氧化钼，Pr4Mo9O18，其结构包含以前未知的Mo7、Mo13和Mo19的集合。新的集合结构产品是一种小带隙半导体。
LAMOX 快离子导体和超导体的前体。
用于固态合成显著的三元还原氧化钼，Pr4Mo9018，其结构包含以前未知的Mo7、Mo13和Mo9结构簇。新的集合结构产品是一种小带隙半导体。

象形圖

Exclamation markHealth hazard
GHS07,GHS08

訊號詞

Warning

危險聲明

H319 - H335 - H351

危險分類

Carc. 2 - Eye Irrit. 2 - STOT SE 3

標靶器官

Respiratory system

儲存類別代碼

11 - Combustible Solids

水污染物質分類（WGK）

WGK 1

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

dust mask type N95 (US), Eyeshields, Faceshields, Gloves

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五氧化二钒 99.95% trace metals basis

Sigma-Aldrich

204854

五氧化二钒

钼 powder, <150 μm, 99.9% trace metals basis

Sigma-Aldrich

266892

钼

二氯钼 (VI)

Sigma-Aldrich

373710

二氯钼 (VI)

钼 powder, <150 μm, 99.99% trace metals basis

Sigma-Aldrich

203823

钼

Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
Design of transparent anodes for resonant cavity enhanced light harvesting in organic solar cells.
Nicholas P Sergeant et al.
Advanced materials (Deerfield Beach, Fla.), 24(6), 728-732 (2012-01-04)
Claudio Girotto et al.
ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
Yu-Zhan Wang et al.
The Journal of chemical physics, 134(3), 034706-034706 (2011-01-26)
The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical
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