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289418

Sigma-Aldrich

Indium(III) oxide

99.99% trace metals basis

Synonym(s):

Diindium trioxide, Indium sesquioxide

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About This Item

Empirical Formula (Hill Notation):
In2O3
CAS Number:
1312-43-2
Molecular Weight:
277.63
EC Number:
215-193-9
MDL number:
MFCD00011060
UNSPSC Code:
12352300
PubChem Substance ID:
24857196
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

100

Assay

99.99% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: indium

density

7.18 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[In]O[In]=O

InChI

1S/2In.3O

InChI key

SHTGRZNPWBITMM-UHFFFAOYSA-N

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Application

  • Comparative analysis on application conditions of indium (III) oxide-reinforced glasses in nuclear waste management and source transportation: A Monte Carlo study: This research explores the use of indium (III) oxide-reinforced glass for radioactive waste containment, highlighting its effectiveness and potential in nuclear waste management (ALMisned et al., 2023).
  • Double-shelled hollow rods assembled from nitrogen/sulfur-codoped carbon coated indium oxide nanoparticles as excellent photocatalysts: Discusses the synthesis and application of indium oxide nanoparticles in photocatalysis, demonstrating significant enhancements in environmental cleanup technologies (Sun et al., 2019).
  • Black indium oxide a photothermal CO2 hydrogenation catalyst: Investigates black indium oxide for its use in photocatalytic CO2 reduction, a critical process for sustainable energy and chemical synthesis (Wang et al., 2020).
  • Material proposal for 2D indium oxide: This study proposes two-dimensional indium oxide, discussing its material characteristics and potential applications in electronics and optoelectronics (Kakanakova-Georgieva et al., 2021).
  • Purification of indium by solvent extraction with undiluted ionic liquids: Examines the processes of extracting and purifying indium using green chemistry approaches, contributing to more sustainable practices in materials processing (Deferm et al., 2016).

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Mareike V Hohmann et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 23(33), 334203-334203 (2011-08-05)
The ionization potentials of In(2)O(3) films grown epitaxially by magnetron sputtering on Y-stabilized ZrO(2) substrates with (100) and (111) surface orientation are determined using photoelectron spectroscopy. Epitaxial growth is verified using x-ray diffraction. The observed ionization potentials, which directly affect
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
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