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203424

Sigma-Aldrich

Indium(III) oxide

99.998% trace metals basis

Synonym(s):

Diindium trioxide, Indium sesquioxide

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About This Item

Empirical Formula (Hill Notation):
In2O3
CAS Number:
Molecular Weight:
277.63
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

Assay

99.998% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: indium

density

7.18 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[In]O[In]=O

InChI

1S/2In.3O

InChI key

SHTGRZNPWBITMM-UHFFFAOYSA-N

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Application

  • Synthesis and Characterization: The development of gold nanoclusters on the surface of tin and indium oxide films, synthesizing new materials for advanced applications (Korotcenkov et al., 2014).
  • Photocatalysis: Using nitrogen/sulfur-codoped carbon-coated indium oxide nanoparticles as excellent photocatalysts, providing insights into environmental and energy applications (Sun et al., 2019).

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Ariel Amir et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(6), 1850-1855 (2012-02-09)
Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive

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