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267414

Sigma-Aldrich

Silicon

powder, −60 mesh, 99.998% trace metals basis

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About This Item

Formule linéaire :
Si
Numéro CAS:
7440-21-3
Poids moléculaire :
28.09
Numéro CE :
231-130-8
Numéro MDL:
MFCD00085311
Code UNSPSC :
12352302
ID de substance PubChem :
24856222
Nomenclature NACRES :
NA.23

Pureté

99.998% trace metals basis

Forme

powder

Taille des particules

−60 mesh

Point d'ébullition

2355 °C (lit.)

Pf

1410 °C (lit.)

Densité

2.33 g/mL at 25 °C (lit.)

Chaîne SMILES 

[Si]

InChI

1S/Si

Clé InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Pictogrammes

Flame
GHS02

Mention d'avertissement

Warning

Mentions de danger

H228

Classification des risques

Flam. Sol. 2

Code de la classe de stockage

4.1B - Flammable solid hazardous materials

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

Eyeshields, Gloves, type N95 (US)

Faites votre choix parmi les versions les plus récentes :

Certificats d'analyse (COA)

Lot/Batch Number
MKCB3168V
MKBQ9355V
MKBG9790V
MKBC0149
07215AJ

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Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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