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215066

Sigma-Aldrich

Gallium(III) oxide

≥99.99% trace metals basis

Synonyme(s) :

Gallium trioxide

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About This Item

Formule empirique (notation de Hill):
Ga2O3
Numéro CAS:
Poids moléculaire :
187.44
Numéro CE :
Numéro MDL:
Code UNSPSC :
12352303
ID de substance PubChem :
Nomenclature NACRES :
NA.23

Niveau de qualité

Pureté

≥99.99% trace metals basis

Forme

(crystalline powder)

Pertinence de la réaction

reagent type: catalyst
core: gallium

Densité

5.88 g/mL at 25 °C

Chaîne SMILES 

O=[Ga]O[Ga]=O

InChI

1S/2Ga.3O

Clé InChI

QZQVBEXLDFYHSR-UHFFFAOYSA-N

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Description générale

Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others.

Application

Ga2O3 is widely used as a host material for the fabrication of electroluminescent devices. For example, europium-doped Ga2O3 thin films can be used as a light-emitting layer to fabricate an optically transparent electroluminescent device.

Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.

It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium.

Code de la classe de stockage

11 - Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 2

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

Eyeshields, Gloves, type N95 (US)


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Bipin Pandey et al.
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This paper reports the formation of self-organized nanoporous gallium oxide by anodization of solid gallium metal. Because of its low melting point (ca. 30 °C), metallic gallium can be shaped into flexible structures, permitting the fabrication of nanoporous anodic oxide
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Sr(2)CuGaO(3)S, a Rare Example of Square Pyramidal Gallium.
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Light-scattering properties of individual gold-in-Ga(2)O(3) peapod nanowires and gold-in-Ga(2)O(3) core/shell nanowires were investigated by optical dark-field microscopy. The observed scattering peaks are suggested to result from plasmonic resonance of the gold nanopeas and nanorods in the Ga(2)O(3) nanowires. As the
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Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based

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