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647705

Sigma-Aldrich

Silizium

wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

Synonym(e):

Silicon element

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About This Item

Lineare Formel:
Si
CAS-Nummer:
7440-21-3
Molekulargewicht:
28.09
MDL-Nummer:
MFCD00085311
UNSPSC-Code:
12352300
PubChem Substanz-ID:
24883420
NACRES:
NA.23

Form

crystalline (cubic (a = 5.4037))
wafer

Qualitätsniveau

100

Enthält

boron as dopant

Durchm. × Dicke

2 in. × 0.3 mm

bp

2355 °C (lit.)

mp (Schmelzpunkt)

1410 °C (lit.)

Dichte

2.33 g/mL at 25 °C (lit.)

Halbleitereigenschaften

<111>, P-type

SMILES String

[Si]

InChI

1S/Si

InChIKey

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Physikalische Eigenschaften

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Lagerklassenschlüssel

13 - Non Combustible Solids

WGK

WGK 2

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

Eyeshields, Gloves, type N95 (US)

Hier finden Sie alle aktuellen Versionen:

Analysenzertifikate (COA)

Lot/Batch Number
MKCL1888
MKCH9674
MKCD3690
MKBX1011V
MKBV5800V

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Siliziumdioxid single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10&#160;mm × 10&#160;mm × 0.5&#160;mm

Sigma-Aldrich

634867

Siliziumdioxid

Goldbeschichtete Silizium-Wafer 99.999% (Au), layer thickness 1000&#160;Å, 99.99% (Ti)

Sigma-Aldrich

643262

Goldbeschichtete Silizium-Wafer

Silizium pieces, 99.95% trace metals basis

Sigma-Aldrich

343250

Silizium

Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
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Protokolle

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Global Trade Item Number

SKUGTIN
647705-1EA4061832731094
647705-5EA

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