215066
Gallium(III) oxide
≥99.99% trace metals basis
Synonyme(s) :
Gallium trioxide
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About This Item
Formule empirique (notation de Hill):
Ga2O3
Numéro CAS:
Poids moléculaire :
187.44
Numéro CE :
Numéro MDL:
Code UNSPSC :
12352300
ID de substance PubChem :
Nomenclature NACRES :
NA.23
Produits recommandés
Niveau de qualité
Pureté
≥99.99% trace metals basis
Forme
(crystalline powder)
Pertinence de la réaction
reagent type: catalyst
core: gallium
Densité
5.88 g/mL at 25 °C
Chaîne SMILES
O=[Ga]O[Ga]=O
InChI
1S/2Ga.3O
Clé InChI
QZQVBEXLDFYHSR-UHFFFAOYSA-N
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Catégories apparentées
Description générale
Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others.
Application
Ga2O3 is widely used as a host material for the fabrication of electroluminescent devices. For example, europium-doped Ga2O3 thin films can be used as a light-emitting layer to fabricate an optically transparent electroluminescent device.
Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.
It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.
It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium.
Code de la classe de stockage
11 - Combustible Solids
Classe de danger pour l'eau (WGK)
WGK 2
Point d'éclair (°F)
Not applicable
Point d'éclair (°C)
Not applicable
Équipement de protection individuelle
Eyeshields, Gloves, type N95 (US)
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Les clients ont également consulté
Bipin Pandey et al.
Langmuir : the ACS journal of surfaces and colloids, 28(38), 13705-13711 (2012-09-01)
This paper reports the formation of self-organized nanoporous gallium oxide by anodization of solid gallium metal. Because of its low melting point (ca. 30 °C), metallic gallium can be shaped into flexible structures, permitting the fabrication of nanoporous anodic oxide
Vladimir N Sigaev et al.
Nanoscale, 5(1), 299-306 (2012-11-21)
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Sr(2)CuGaO(3)S, a Rare Example of Square Pyramidal Gallium.
W. J. Zhu et al.
Inorganic chemistry, 36(17), 3576-3577 (1997-08-13)
Yi-Jen Wu et al.
ACS nano, 4(3), 1393-1398 (2010-02-13)
Light-scattering properties of individual gold-in-Ga(2)O(3) peapod nanowires and gold-in-Ga(2)O(3) core/shell nanowires were investigated by optical dark-field microscopy. The observed scattering peaks are suggested to result from plasmonic resonance of the gold nanopeas and nanorods in the Ga(2)O(3) nanowires. As the
Rujia Zou et al.
Small (Weinheim an der Bergstrasse, Germany), 7(23), 3377-3384 (2011-10-06)
Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based
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