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764639

Sigma-Aldrich

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2 ′′:5′′,2′′′-quaterthiophene

Synonym(e):

α,ω-Diperfluorohexyl-quarterthiophene, DFH-4T

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About This Item

Empirische Formel (Hill-System):
C28H8F26S4
CAS-Nummer:
446043-85-2
Molekulargewicht:
966.58
MDL-Nummer:
MFCD23098728
UNSPSC-Code:
12352103
PubChem Substanz-ID:
329767133
NACRES:
NA.23

Form

solid

mp (Schmelzpunkt)

205-210 °C

Halbleitereigenschaften

N-type (mobility≤0.64 cm2/V·s)

SMILES String

FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)c1ccc(s1)-c2ccc(s2)-c3ccc(s3)-c4ccc(s4)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

InChI

1S/C28H8F26S4/c29-17(30,19(33,34)21(37,38)23(41,42)25(45,46)27(49,50)51)15-7-5-13(57-15)11-3-1-9(55-11)10-2-4-12(56-10)14-6-8-16(58-14)18(31,32)20(35,36)22(39,40)24(43,44)26(47,48)28(52,53)54/h1-8H

InChIKey

UBMTYFFPSPVBSP-UHFFFAOYSA-N

Allgemeine Beschreibung

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DFH-4T) is a n-type semiconducting material. It is a quaterthiophene derivative that contains fluoroalkyl groups and can be used as an electron transporting layer. It can be used in organic electronics.

Anwendung

This molecule has shown high mobilities (electron mobilities of up to 0.64 cm2/Vs) when used as an n-type semiconducting material in OFET devices.

Lagerklassenschlüssel

11 - Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Hier finden Sie alle aktuellen Versionen:

Analysenzertifikate (COA)

Lot/Batch Number
MKBL5287

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A new method of using supercritical carbon dioxide as a green solvent for synthesis and purification of 5, 5?-bis (tridecafluorohexyl)-2, 2?: 5?, 2 ?: 5 ?, 2?-quaterthiophene, which is one of n-type organic semiconducting materials
Hirase R, et al.
Tetrahedron Letters, 59(5), 469-472 (2018)
Hakan Usta et al.
Accounts of chemical research, 44(7), 501-510 (2011-05-28)
Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features
Overlapping-Gate Organic Light-Emitting Transistors
Lee J, et al.
Advanced Electronic Materials, 5(1), 1800437-1800437 (2019)

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