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921521

Sigma-Aldrich

Monolayer hexagonal Boron Nitride (hBN) on copper foil

size 6 in. (6 in.) × 150 mm (150 mm)

Synonym(s):

Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene

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About This Item

Linear Formula:
h-BN
CAS Number:
10043-11-5
MDL number:
MFCD00011317
UNSPSC Code:
12352302
NACRES:
NA.23

description

Bandgap: 5.97 eV
Raman Peak: 1370 /cm-1
h-BN Coverage: 100% with sporadic adlayers
 (Monolayer h-BN)

Quality Level

100

size

6 in. (6 in.) × 150 mm (150 mm)

grain size

>4 μm

InChI

1S/BN/c1-2

InChI key

PZNSFCLAULLKQX-UHFFFAOYSA-N

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Application

Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (∼ 6 eV that can be tuned to ∼2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
  • Two-dimensional electronics
  • Nanophotonic and other optoelectronic devices
  • Quantum communication and information science
  • Aerospace industry
  • MEMS and NEMS
  • Micro-/nano- actuators
  • Insulating/transparent coatings .

Storage and Stability

To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
For all hBN-on-copper products, the displayed range represents electronic data that were obtained after transfer hBN to SiO2. Your own metrics will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.

Substrates

6″ x 6″ h-BN/copper foil pieces are secured to their underlying plastic containers with four small Kapton tape pieces, one in each corner. Gently peel the tape or cut off the corners of the foil to release the foil from the plastic container.

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Stagi L, et al.
Materials, 12(23), 3905-3905 (2019)
Xu-Qian Zheng et al.
Microsystems & nanoengineering, 3, 17038-17038 (2017-07-31)
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report
Kun Ba et al.
Scientific reports, 7, 45584-45584 (2017-04-04)
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries

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