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912816

Sigma-Aldrich

di-n-butylammonium methylammonium lead(II) heptaiodide

greener alternative

n = 2

Synonym(s):

(BA)2(MA)Pb2I7, 2D perovskite, Bis(butylammonium) methylammonium heptaiododiplumbate

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About This Item

Linear Formula:
(BuNH3)2(CH3NH3)Pb2I7
CAS Number:
199733-88-5
UNSPSC Code:
12352101
NACRES:
NA.23

Quality Level

100

form

solid

greener alternative product characteristics

Design for Energy Efficiency
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Enabling,

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General description

We are committed to bringing you Greener Alternative Products, which adhere to one or more of The 12 Principles of Greener Chemistry. This product has been enhanced for "Energy efficiency".

Application

2D perovskites have been used as the active material in may applications such as light emmiting diodes, phototransistors, and solar cells. Unlike 3D perovskites, these layered materials give higher moisture stability and longer device lifetimes.
Di-n-butylammonium methylammonium lead(II) heptaiodide can be used for fabrication of perovskite materials for solar cells, light-emitting diodes (LEDs), photodetectors, and lasers.

Signal Word

Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - Repr. 1A - STOT RE 2

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Yuchuan Shao et al.
Nano letters, 17(12), 7330-7338 (2017-11-08)
Recently, two-dimensional (2D) organic-inorganic perovskites emerged as an alternative material for their three-dimensional (3D) counterparts in photovoltaic applications with improved moisture resistance. Here, we report a stable, high-gain phototransistor consisting of a monolayer graphene on hexagonal boron nitride (hBN) covered
Mingjian Yuan et al.
Nature nanotechnology, 11(10), 872-877 (2016-06-28)
Organometal halide perovskites exhibit large bulk crystal domain sizes, rare traps, excellent mobilities and carriers that are free at room temperature-properties that support their excellent performance in charge-separating devices. In devices that rely on the forward injection of electrons and
Duyen H Cao et al.
Journal of the American Chemical Society, 137(24), 7843-7850 (2015-05-29)
We report on the fabrication and properties of the semiconducting 2D (CH3(CH2)3NH3)2(CH3NH3)(n-1)Pb(n)I(3n+1) (n = 1, 2, 3, and 4) perovskite thin films. The band gaps of the series decrease with increasing n values, from 2.24 eV (CH3(CH2)3NH3)2PbI4 (n = 1)

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