104914
Dichloromethylvinylsilane
97%
Synonym(s):
Methylvinyldichlorosilane
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About This Item
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vapor density
>1 (vs air)
Quality Level
Assay
97%
refractive index
n20/D 1.430 (lit.)
bp
92 °C (lit.)
density
1.08 g/mL at 25 °C (lit.)
storage temp.
2-8°C
SMILES string
C[Si](Cl)(Cl)C=C
InChI
1S/C3H6Cl2Si/c1-3-6(2,4)5/h3H,1H2,2H3
InChI key
YLJJAVFOBDSYAN-UHFFFAOYSA-N
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General description
Dichloromethylvinylsilane reacts with dimethylsulphide borane to form organosilylborane, which further gets ammonolysized to form the polymer of the SiBCN.
Application
Dichloromethylvinylsilane was used as single molecular precursor for the deposition of β-SiC thin films and β -SiC nanowires by metalorganic chemical vapor deposition on bare Si 100 and Ni-coated Si 100 substrates. Dichloromethylvinylsilane was used in the synthesis and characterization of Tris(1-(dichloro(methyl)silyl)ethyl)borane,monomer.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 3 Inhalation - Acute Tox. 4 Oral - Flam. Liq. 2 - Skin Corr. 1B
Supplementary Hazards
Storage Class Code
3 - Flammable liquids
WGK
WGK 1
Flash Point(F)
38.1 °F - closed cup
Flash Point(C)
3.4 °C - closed cup
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Growth of β-SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane.
J. Vac. Sci. Technol. B, 23(4), 1722-1725 (2005)
Synthesis and Structure Characterization of Amorphous SiBCN Ceramic Precursors.
Rare Metals Materials and Engineering, 40, 234-237 (2011)
Radioisotopes, 33(8), 513-518 (1984-08-01)
Poly(methylvinylsiloxane)-bonded silica gel was synthesized by condensation reaction between silica gel and the hydrolysis product of methylvinyldichlorosilane. Graft polymerization of styrene or indene onto poly(methylvinylsiloxane)-bonded silica gel was carried out by gamma-ray irradiation and compared with that onto silica gel.
Influence of the Precursor Cross-Linking Route on the Thermal Stability of Si- B- C- O Ceramics.
Chemistry of Materials, 20(22), 7148-7156 (2008)
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