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About This Item
線性公式:
NH4F
CAS號碼:
分子量：:
37.04
EC號碼:
MDL號碼:
分類程式碼代碼:
12352300
eCl@ss:
38050106
PubChem物質ID:
NACRES:
NA.21
推薦產品
等級
ACS reagent
化驗
≥98.0%
形狀
crystals, granules or chunks
雜質
≤0.005% insolubles
燃燒殘留物
≤0.01%
pH值
~6 (20 °C)
負離子痕跡
chloride (Cl-): ≤0.001%
sulfate (SO42-): ≤0.005%
正離子痕跡
Fe: ≤5 ppm
heavy metals (as Pb): ≤5 ppm
SMILES 字串
N.F
InChI
1S/FH.H3N/h1H;1H3
InChI 密鑰
LDDQLRUQCUTJBB-UHFFFAOYSA-N
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應用
水热法合成配合物 NaHoF 4 和 NaEuF 4 具有萤石结构，对固体激光器、光致发光和磁特性具有重要意义。
訊號詞
Danger
危險分類
Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral
儲存類別代碼
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
水污染物質分類（WGK）
WGK 1
閃點（°F）
does not flash
閃點（°C）
does not flash
Self-organized TiO2 nanotubes prepared in ammonium fluoride containing acetic acid electrolytes.
Tsuchiya H, et al.
Electrochemical Communications, 7(6), 576-580 (2005)
Phase transition in ammonium fluoride.
Stevenson R.
J. Chem. Phys. , 34(1), 346-347 (1961)
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Gerischer H and Lubke M.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Lewerenz HJ, et al.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Jae Hoon Bong et al.
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
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