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描述
Bandgap: 5.97 eV
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Orientation: <1-0-0>
Raman Peak: 1370 /cm-1
Substrate Type/Doping: P/B
hBN Coverage: 100% with sporadic adlayers
1-25 Ω-cm
品質等級
直徑
150 mm (6 in.)
尺寸
300 nm , Oxide
厚度
675 ± 25 μm , Wafer
粒徑
>4 μm
InChI
1S/BN/c1-2
InChI 密鑰
PZNSFCLAULLKQX-UHFFFAOYSA-N
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應用
Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices †††
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- Insulating/transparent coatings
儲存和穩定性
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類(WGK)
WGK 3
閃點(°F)
Not applicable
閃點(°C)
Not applicable
分析證明 (COA)
輸入產品批次/批號來搜索 分析證明 (COA)。在產品’s標籤上找到批次和批號,寫有 ‘Lot’或‘Batch’.。
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Materials, 12(23) (2019)
Piezoelectricity in Monolayer Hexagonal Boron Nitride
Advanced Materials, 32 (2020)
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