推薦產品
蒸汽壓力
11.66 psi ( 20 °C)
化驗
≥99.0% (GC)
形狀
liquid
自燃溫度
842 °F
折射率
n20/D 1.358 (lit.)
n20/D 1.359
bp
26-28 °C (lit.)
mp
−99 °C (lit.)
密度
0.648 g/mL at 25 °C (lit.)
儲存溫度
2-8°C
SMILES 字串
C[Si](C)(C)C
InChI
1S/C4H12Si/c1-5(2,3)4/h1-4H3
InChI 密鑰
CZDYPVPMEAXLPK-UHFFFAOYSA-N
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應用
四甲基硅烷可用作合成硅掺杂类金刚石碳基(DLC-Si)薄膜和碳化硅(SiC)块状晶体的硅前体。还可用作研究分子间C-H键活化反应的烃类底物。
分析證明 (COA)
輸入產品批次/批號來搜索 分析證明 (COA)。在產品’s標籤上找到批次和批號，寫有 ‘Lot’或‘Batch’.。
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Bendavid A, et al.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
Roy E Hoffman
Journal of magnetic resonance (San Diego, Calif. : 1997), 163(2), 325-331 (2003-08-14)
The chemical shift of TMS is commonly assumed to be zero. However, it varies by over 1 ppm for 1H and 4 ppm for 13C and shows a correlation with the physical properties of the solvent. Using the commonly accepted
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