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651486

Sigma-Aldrich

砷化镓

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

同義詞:

Gallium monoarsenide

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About This Item

線性公式:
GaAs
CAS號碼:
1303-00-0
分子量：:
144.64
EC號碼:
215-114-8
MDL號碼:
MFCD00011017
分類程式碼代碼:
12352300
PubChem物質ID:
24883832
NACRES:
NA.23

品質等級

100

形狀

(single crystal substrate)

電阻係數

≥1E7 Ω-cm

直徑× 厚度

2 in. × 0.5 mm

密度

5.31 g/mL at 25 °C (lit.)

半導體屬性

<100>

SMILES 字串

[Ga]#[As]

InChI

1S/As.Ga

InChI 密鑰

JBRZTFJDHDCESZ-UHFFFAOYSA-N

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相關類別

物理性質

未掺杂的（Si 型半导体），蚀坑密度 <5×104cm-2，生长技术为液封直拉法和水平布里奇曼法
迁移率 ≥4500cm2 · V-1 · S-1

外觀

cubic (a = 5.6533 Å)

象形圖

Health hazard
GHS08

訊號詞

Danger

危險聲明

H350,H360F,H372

危險分類

Carc. 1B - Repr. 1B - STOT RE 1

標靶器官

Respiratory system,hematopoietic system

儲存類別代碼

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

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分析證明 (COA)

Lot/Batch Number
MKCQ3703
MKCP1414
MKCH7479
MKCC3292
10719AD

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Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs
[A matrix gallium-arsenide detector for roentgenoraphy].
A P Vorob'ev et al.
Meditsinskaia tekhnika, (5)(5), 21-26 (2012-11-20)
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