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633097

Sigma-Aldrich

硅

nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

同義詞:

Silicon anode material

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About This Item

線性公式:
Si
CAS號碼:
7440-21-3
分子量：:
28.09
EC號碼:
231-130-8
MDL號碼:
MFCD00085311
分類程式碼代碼:
12352302
PubChem物質ID:
24882537
NACRES:
NA.23

化驗

≥98% trace metals basis

形狀

nanopowder

粒徑

<100 nm (TEM)

bp

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

SMILES 字串

[Si]

InChI

1S/Si

InChI 密鑰

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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相關類別

一般說明

我们的 电池级硅纳米粉具有100纳米的颗粒尺寸和 98%的纯度。由于其良好的电化学性质，这种轻质灰色粉末在先进电池研究和开发中极受 欢迎 。它具有高比表面积， 从而实现更好的电化学性能，小尺寸确保 其在电池电极中分散良好。凭借一致的 颗粒尺寸和高纯度，这种硅纳米粉末是 有意改善锂离子电池性能的电池研究者和制造商 的绝佳选择。

應用

我们的 硅纳米粉是一种多功能材料，可用于 各种领域，如能量储存、生物医学和电子 行业。良好的电化学性质令其成为先进锂离子电池开发中极受欢迎 的材料。 我们电池级硅纳米粉末的小颗粒尺寸和高比表面积 令其成为锂离子电池阳极中 良好的候选材料。 与传统石墨阳极相比，使用硅纳米粉末阳极的高容量锂离子电池 有望实现更大的能量密度和更长的使用寿命 。 此外，高纯度和一致的颗粒尺寸使其成为 电池研究人员和制造商的可靠材料。

特點和優勢

小颗粒尺寸确保这种电池级硅纳米粉在电池电极内部分散良好。
  • 良好的分散性
  • 高比表面积
  • 改善的机械稳定性
  • 增强的性能

象形圖

Flame
GHS02

訊號詞

Warning

危險聲明

H228

危險分類

Flam. Sol. 2

儲存類別代碼

4.1B - Flammable solid hazardous materials

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

Eyeshields, Gloves, type N95 (US)

從最近期的版本中選擇一個：

分析證明 (COA)

Lot/Batch Number
MKCP8819
MKCP6299
MKCP0860
MKCN3476
MKCM0616

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Zhenhui Kang et al.
Nanoscale, 3(3), 777-791 (2010-12-17)
Owing to their abundant unique properties and ready compatibility with Si microelectronic technology, Si nanostructures are becoming one of the most important classes of nano semiconductors. Particularly, small-sized Si nanoparticles possess distinctive photoluminescence (PL), biocompatibility, and active surface properties. In
High temperature Boron-based thermoelectric materials
Mori T
Material Matters, 4, 37-37 (2009)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
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